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參數(shù)資料
| 型號(hào)： | 2224-6L |
| 英文描述： | 3.3V EconoReset |
| 中文描述： | 晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 246K |
| 代理商： | 2224-6L |
R.A.041400
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECT.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2224-12L
12 Watts, 22 Volts, Class C
Microwave 2200 - 2400 MHz
GENERAL DESCRIPTION
The 2224-12L is a Common Base transistor capable of providing 12 Watts Class
C, RF Output Power over the band 2200-2400 MHz, The transistor includes
double input and output prematching for full broadband capability. Gold
Metalization and diffused ballasting are used to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55AW Style 1
COMMON BASE
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
°
C
44 Watts
Maximum Voltage and Current
Collector to Emitter Voltage (BV
CES
) 45 V
Emitter to Base Voltage (BV
EBO
) 3
VCollector Current (I
c
) 3.0 Amps
Maximum Temperatures
Storage Temperature -40 to +200
°
C
Operating Junction Temperature +200
°
C
ELECTRICAL CHARACTERISTICS @ 25
°
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
P
out
P
in
P
g
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
12
W
W
dB
%
2.25
7.5
42
Load Mismatch Tolerance
F = 2200-2400 MHz
V
CC
= 22 Volts
Pout = 12 Watts Pk
9:1
FUNCTIONAL CHARACTERISTICS @ 25
°
C
BV
CES
BV
EBO
h
FE
C
OB
θ
jc
*Not measureable due to internal prematch network
Collector to Base Breakdown
Emitter to Base Breakdown
DC – Current Gain
Output Capacitance*
Thermal Resistance
45
3.0
15
V
V
100
Ic = 50 mA
Ie = 10 mA
Vce = 5V, Ic = 1A
Vcb = 28v, F = 1MHz
Tc = 25
o
C
4.0
°
C/W
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