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參數(shù)資料
| 型號(hào)： | 210MS8E |
| 廠商： | 美國(guó)訊泰微波有限公司上海代表處 |
| 英文描述： | GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, 1.5 - 2.3 GHz |
| 中文描述： | 砷化鎵MMIC電壓可變衰減器，1.5 - 2.3吉赫 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 344K |
| 代理商： | 210MS8E |
A
6
6 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC210MS8
/
210MS8E
GaAs MMIC VOLTAGE-VARIABLE
ATTENUATOR, 1.5 - 2.3 GHz
v02.0705
General Description
Features
Functional Diagram
Single Positive Voltage Control: 0 to +2.5V
High Attenuation Range: >50 dB @ 1.9 GHz
High Input IP3: +15 dBm Typical
(All Attenuation States)
Ultra Small Package: MSOP
Electrical Specifications,
T
A
= +25° C, Vdd = +2.5 Vdc, 50 Ohm System
Typical Applications
The HMC210MS8 & HMC210MS8E are miniature
absorptive voltage variable attenuators in 8-lead
MSOP packages. The device operates with a positive
supply voltage (+2.5V), and a positive control voltage.
A unique feature is the high third order intercept point
for all attenuation states. Operation up to 2.3 GHz is
possible with a reduced attenuation range of 31 dB.
The HMC210MS8 / HMC210MS8E is ideal for:
Base Station Infrastructure
Portable Wireless
MMDS
Parameter
Condition
Min.
Typical
Max.
Units
Insertion Loss
(VCTL = 0 V Min. Atten.)
1.8 - 2.0 GHz
1.7 - 2.1 GHz
1.5 - 2.3 GHz
3.3
3.4
5.0
4.9
5.5
7.5
dB
dB
dB
Attenuation Range
(VCTL = 0 to +2.5 V)
1.8 - 2.0 GHz
1.7 - 2.1 GHz
1.5 - 2.3 GHz
44
39
31
55
43
40
dB
dB
dB
Return Loss
(VCTL = 0 to +2.5 V)
1.5 - 2.0 GHz
2.0 - 2.3 GHz
9
6
dB
dB
Input Power for 0.1 dB Compression
(f = 1.9 GHz)
Min Atten.
Atten. >2.0
15
-5
dBm
dBm
Input Power for 1.0 dB Compression
(f = 1.9 GHz)
Min Atten.
Atten. >2.0
17
0
20
3
dBm
dBm
Input Third Order Intercept
(f = 1.9 GHz, Two-tone Input Power = +5 dBm Each Tone)
Min Atten.
Atten. >2.0
30
10
35
15
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
1.5 - 2.3 GHz
0.9
2.6
μS
μS
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