參數(shù)資料
型號： 20MT120UFPBF
元件分類： IGBT 晶體管
英文描述： 40 A, 1200 V, N-CHANNEL IGBT
封裝： MTP, 18 PIN
文件頁數(shù)： 7/13頁
文件大?。?/td> 699K
代理商： 20MT120UFPBF
3
20MT120UF
I27124 rev. D 02/03
www.irf.com
VFM
Diode Forward Voltage Drop
2.48
2.94
V
IC = 20A
3.28
3.90
IC = 40A
2.44
2.84
IC = 20A, TJ = 125°C
3.45
4.14
IC = 40A, TJ = 125°C
2.21
2.93
IC = 20A, TJ = 150°C
Erec
Reverse Recovery Energy of the Diode
420
630
J
VGE = 15V, Rg = 5
, L = 200H
trr
Diode Reverse Recovery Time
98
150
ns
VCC = 600V, IC = 20A
Irr
Peak Reverse Recovery Current
33
50
A
TJ = 125°C
Thermal- Mechanical Specifications
TJ
Operating Junction Temperature Range
- 40
150
°C
TSTG
Storage Temperature Range
- 40
125
RthJC
Junction-to-Case
IGBT
0.35
0.52
°C/ W
Diode
0.40
0.61
RthCS
Case-to-Sink
Module
0.06
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance (external shortest distance in air
5.5
mm
between two terminals)
Creepage (shortest distance along external
8
surface of the insulating material between 2 terminals
)
T
Mounting Torque
(2)
3 ± 10%
Nm
Wt
Weight
66
g (oz)
Parameters
Min
Typ
Max
Units
Diode Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min
Typ Max Units Test Conditions
(2) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
相關PDF資料
PDF描述
20MT120UFP 40 A, 1200 V, N-CHANNEL IGBT
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