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參數(shù)資料
| 型號(hào)： | 20602 |
| 英文描述： | 3.0 Volt-only Flash Memory Technology |
| 中文描述： | 3.0伏只快閃記憶體技術(shù) |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | 20602 |
3.0 Volt-only Technology Background
3
charge pump design results in a negligible die size increase over the corresponding density,
using the same design rules, in the 5.0 volt-only family.
The erase operation is accomplished through AMD’s patented Negative Gate Erase
technology (NGE), which incorporates Fowler-Nordheim tunneling (see Figure 1); the
programming operation is accomplished with hot electron injection techniques (see Figure 2).
Figure 1. 3.0 Volt-only Negative Gate Erase Voltage Setup
Notes:
1.
2.
3.
Gate terminal is pumped to -8.5 volts at less than 10 μA current.
10 mA - 20 mA (peak) erase current is provided to the source terminal by the system’s V
CC
supply.
D = drain, G = Gate, S = Source
Figure 2. 3.0 Volt-only Programming Voltage Setup
Notes:
1.
2.
3.
Gate terminal is pumped to 8.0 volts at less than 10 μA current.
Drain terminal is pumped to 5.5 volts from the 3.0 V supply at 0.5 mA.
D = drain, G = Gate, S = Source
tri-state
bit line
5.0 V
-8.5 V
word line
G
D
S
5.5 V
bit line
0.0 V
8.0 V
word line
G
D
S
相關(guān)PDF資料 |
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| 206043-1 | EINBAUKUPPLUNG FLANSCH 14POL GROESSE 11 |
| 206043-3 | KUPPLUNG AUSSENGEWINDE 14POL GROESSE 17 |
| 206062-1 | CONNECTORS CIRCULAR |
| 206136-1 | KUPPLUNGSGEHAEUSE 7POL GEHAEUSE 23 |
| 206137-1 | STECKER AUSSENGEWINDE 7POL GROESSE 23 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 206-02053 | 制造商:LG Corporation 功能描述:INSTR BOOK |
| 206-02054-01 | 制造商:LG Corporation 功能描述:OPERATING GUIDE |
| 20602-101 | 制造商:HHSMIH 功能描述: |
| 206-02150 | 制造商:LG Corporation 功能描述:INSTR BOOK |
| 206-0216-00 | 制造商:tektronix 功能描述: |
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