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參數(shù)資料
| 型號： | 2005 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, 55BT, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 163K |
| 代理商： | 2005 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2005
5.0 Watt - 28 Volts, Class C
Microwave 2000 MHz
GENERAL DESCRIPTION
The 2005 is a COMMON BASE transistor capable of providing 5 Watts Class
C, RF output power at 2000 MHz. Gold metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature Solder Sealed package.
CASE OUTLINE
55BT-1, Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C
20 Watts
o
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
50 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
1.0 A
Maximum Temperatures
Storage Temperature
- 65 to + 200 C
o
Operating Junction Temperature
+ 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2 GHz
Vcb = 28 Volts
Po = 5.0 Watts
As Above
F = 2 GHz, Po = 5 W
5.0
8.0
8.5
40
0.8
30:1
Watt
dB
%
BVces
BVcbo
BVebo
Icbo
h
FE
Cob
θjc
Collector to Emitter Breakdown
Collector to Base Breakdown
Emitter to Base Breakdown
Collector to Base Current
Current Gain
Output Capacitance
Thermal Resistance
Ic = 20 mA
Ic = 2 mA
Ie = 2.0 mA
Vcb = 28 Volts
Vce = 5 V, Ic = 200 mA
F =1 MHz, Vcb = 28 V
50
45
3.5
20
7.5
1.0
8.5
Volts
mA
pF
C/W
o
Issue August 1996
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