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| 型號： | 2000SHORTFORMCAT |
| 文件頁數(shù)： | 14/24頁 |
| 文件大?。?/td> | 250K |
| 代理商： | 2000SHORTFORMCAT |
14
NPT Technology ....
Non-Punch-Through IGBTs
are manufactured by fabricating the MOSFET
structure on the surface of a lightly doped,
n-substrate. No epi layer needs to be grown on the
substrate. The wafer is thinned to 100μm after all
high temperature processes are completed to reduce
the n-drift region. The pn junction required on the
back of the wafer is formed using a p+ implant and
a light diffusion. Making the p+ region only a few
μm thick keeps the voltage drop low in this region
and controllable within very tight tolerances
throughout the wafer. This construction provides
an optimal tradeoff between V
CE(SAT)
, switching
speed and ruggedness. At full rated current, the
V
CE(SAT)
may be higher than PT technologies, but
under normal operating currents the difference is
negligible.
Faster Switching
.... Faster turn-off speeds and
lower tail currents are key advantages of NPT
technology. This is primarily due to the generation
of fewer minority carriers during operation in NPT
devices.
Improved High Temperature Operation
.... The
turn-off speed and tail current of an NPT IGBT is
not as temperature dependent as PT devices. These
parameters remain relatively constant over the
entire operating temperature range, resulting in
approximately 50% less dynamic losses at high
temperatures.
Improved Ruggedness
.... NPT technology IGBTs
are avalanche energy, SCSOA and RBSOA rated.
IGBT Technology
Fast IGBT Family ....
Designated by the “GF”
in the part number, these devices are designed
for operation up to 40kHz in hard switching ap-
plications.
Thunderbolt IGBT Family
.... Designated
by the “GT” in the part number, these devices
are designed for operation up to 150kHz hard
switching and 300kHz in resonant
applications.
Easy Paralleling
.... A positive temperature
coefficient of V
makes paralleling of NPT IGBTs
as easy as with MOSFETs.
Tighter Electrical Parameters Distribution
.... NPT
technology has fewer and more easily controlled
processing steps than with PT technologies. The end
user can expect less lot-to-lot variation of electrical
parameters than is possible with PT devices.
Low Leakage Current
.... No lifetime control is used
in producing NPT IGBTs, eliminating the major cause
of leakage current in alternative technologies.
NPT Technology
vs
PT Technology
n-
p+
n-
PASSIVATION
p
p+
OXIDE DIELECTRIC
POLY
AL SOURCE METAL
EMITTER
n+
PASSIVATION
p
OXIDE DIELECTRIC
POLY
AL SOURCE METAL
EMITTER
n+
MOS Structure
Thickness: NPT=100
μ
m PT=400
μ
m
p+ Collector
n- Substrate
n- epi Layer
n++ epi Layer
p++ Substrate/
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