- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄364384 > 1SS305 (NEC Corp.) SILICON SWITCHING DIODES PDF資料下載
參數(shù)資料
| 型號： | 1SS305 |
| 廠商： | NEC Corp. |
| 英文描述： | SILICON SWITCHING DIODES |
| 中文描述： | 硅開關二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 1SS305 |
1987
SILICON SWITCHING DIODE
1SS305
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
DATA SHEET
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
Date Published July 2002 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Low capacitance: C
t
= 4.0 pF MAX.
High speed switching: t
rr
= 3.0 ns MAX.
Wide applications including switching, limitter, clipper.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25°C)
Peak Reverse Voltage
V
RM
100
V
DC Reverse Voltage
V
R
100
V
Peak Forward Current
I
FM
300
mA
Average Rectified Current
I
O
100
mA
DC Forward Current
I
F
100
mA
Maximum Temperatures
Junction Temperature
T
j
150
°C
Storage Temperature Range
T
stg
–55 to + 150
°C
Thermal Resistance
Junction to Ambient
R
th(j-a)
0.85
°C/mW
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F1
I
F
= 10 mA
720
850
mV
V
F2
I
F
= 50 mA
850
1000
mV
Forward Voltage
V
F3
I
F
= 100 mA
950
1200
mV
Reverse Current
I
R
V
R
= 100 V
1.0
μ
A
Capacitance
C
t
V
R
= 0 V, f = 1.0 MHz
2.0
4.0
pF
Reverse Recovery Time
t
rr
I
F
= 10 mA, V
R
= 6 V, R
L
= 100
,
See Test Circuit.
3.0
ns
PACKAGE DIMENSIONS (Unit: mm)
2.1
±
0.1
1.25
±
0.1
2
±
0
0
±
0
3
Marking
2
1
0
+
0
0
0
+
0
0
0
0
0
0
0
+
0
0
CONNECTION DIAGRAM (Top View)
2
1
3
1. N.C.
2. Anode
3. Cathode
Marking : A14
相關PDF資料 |
PDF描述 |
|---|---|
| 1SS345 | UHF Detector, Mixer Applications |
| 1SS350 | UHF Detector, Mixer Applications |
| 1SS351 | UHF Detector, Mixer Applications |
| 1SS353 | Silicon Epitaxial Planar High-Speed Switching Diodes |
| 1SS354 | Silicon Epitaxial Planar High-Speed Switching Diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1SS305-T1-A | 制造商:Renesas Electronics 功能描述:Diode Switching 100V 0.1A 3-Pin SOT-323 T/R 制造商:Renesas Electronics 功能描述:Diode Switching 100V 0.1A 3-Pin SOT-323 T/R Cut Tape |
| 1SS306 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon Epitaxial Planar Type |
| 1SS306(TE85L,F) | 制造商:Toshiba 功能描述:Diode Switching 250V 0.1A 4-Pin SMQ T/R 制造商:Toshiba America Electronic Components 功能描述:S/W Diode,Vr=200V,Io=0.1A,SMQ |
| 1SS306_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Voltage, High Speed Switching Applications |
| 1SS306TE85LF | 制造商:Toshiba America Electronic Components 功能描述:GP HIGH SPEED SWITCHING DIODE |
發(fā)布緊急采購，3分鐘左右您將得到回復。