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參數(shù)資料
| 型號： | 1SS199 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Schottky Barrier Diode for Various Detector, High Speed Switching |
| 中文描述： | 硅肖特基二極管各種探測器，高速開關(guān) |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 17K |
| 代理商： | 1SS199 |
1SS199
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
O
Tj
30
V
Average rectified current
15
mA
Junction temperature
125
°
C
°
C
Storage temperature
Tstg
–55 to +125
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward current
I
F
I
R
C
3.0
—
—
mA
V
F
= 1V
V
R
= 10V
V
R
= 1V, f = 1MHz
Vin = 2Vrms, f = 40MHz, R
L
= 5k
, C
L
= 20pF
Reverse current
—
—
100
μ
A
Capacitance
—
—
3.0
pF
Rectifier efficiency
η
70
—
—
%
ESD-Capability
—
70
—
—
V
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note:
Failure criterion; I
R
≥
200
μ
A at V
R
= 10V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1SS199MHD | Silicon Schottky Barrier Diode for Various Detector, High Speed Switching |
| 1SS200 | HEADER, STRAIGHT 5WAY |
| 1SS201 | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SS226 | Ultra High Speed Switching Diode(超高速開關(guān)二極管) |
| 1SS250 | DIODE (HIGH SPEED SWITCHING APPLICATIONS) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1SS199MHD | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon Schottky Barrier Diode for Various Detector, High Speed Switching |
| 1SS200 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
| 1SS200(F) | 制造商:Toshiba 功能描述:0.1A 80V MINI Bulk 制造商:Toshiba 功能描述:Diode Switching 85V 0.3A 3-Pin Mini |
| 1SS200_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Ultra High Speed Switching Application |
| 1SS201 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) |
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