參數(shù)資料
型號(hào)： 1SS108
廠商： Hitachi,Ltd.
英文描述： Silicon Schottky Barrier Diode for Various Detector, High Speed Switching
中文描述： 硅肖特基二極管各種探測(cè)器，高速開(kāi)關(guān)
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 17K
代理商： 1SS108
1SS108
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Value
Unit
Reverse voltage
V
R
I
O
Tj
30
V
Average rectified current
15
mA
Junction temperature
125
°
C
°
C
Storage temperature
Tstg
–55 to +125
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward current
I
F
I
R
C
3.0
—
—
mA
V
F
= 1V
V
R
= 10V
V
R
= 1V, f = 1MHz
Vin = 2Vrms, f = 40MHz, R
L
= 5k
, C
L
= 20pF
Reverse current
—
—
100
μ
A
Capacitance
—
—
3.0
pF
Rectifier efficiency
η
70
—
—
%
ESD-Capability
—
70
—
—
V
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note:
Failure criterion; I
R
≥
200
μ
A at V
R
= 10V
Forward voltage V (V)
F
F
10
–6
10
–1
0
0.4
0.8
1.2
1.6
2.0
10
–3
10
–5
10
–4
10
–2
Fig.1 Forward current Vs. Forward voltage
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