參數(shù)資料
型號: 1SMB51CAT3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Plastic Surface Mount Zener Overvoltage Transienc Suppressor(塑料表貼封裝,峰值功率600W,變位電壓51V,齊納瞬變電壓抑制器)
中文描述: 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝: PLASTIC, CASE 403A-03, SMB, 2 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 67K
代理商: 1SMB51CAT3
BiDirectional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
1SMB10CAT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
600
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2)
Derate Above 75
°
C
Thermal Resistance from JunctiontoLead
P
D
R
JL
3.0
40
25
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from JunctiontoAmbient
P
D
R
JA
0.55
4.4
226
W
mW/
°
C
°
C/W
Operating and Storage
Temperature Range
T
J
, T
stg
65 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 s, nonrepetitive
2. 1
square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
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