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參數(shù)資料
| 型號： | 1SMB170AT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功率175W，塑料表貼封裝，170V變位電壓，齊納瞬變電壓抑制器) |
| 中文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | PLASTIC, CASE 403A-03, SMB, 2 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 1SMB170AT3 |
1SMB5.0AT3 Series
http://onsemi.com
5
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 6.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 7. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1.0 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
°
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 8. Average power must be derated as the lead or
ambient temperature rises above 25
°
C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 8 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 8 is multiplied by the peak power
value of Figure 1 for the same pulse, the results follow the
expected trend.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1SMB170AT3G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 170V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1SMB170CA | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 Transient Suppressor RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1SMB170CA TR13 | 功能描述:TVS DIODE 170VWM 275VC SMB 制造商:central semiconductor corp 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 類型:齊納 單向通道:- 雙向通道:1 電壓 - 反向關(guān)態(tài)（典型值）:170V 電壓 - 擊穿（最小值）:189V 電壓 - 箝位（最大值）@ Ipp:275V 電流 - 峰值脈沖（10/1000μs）:2.2A 功率 - 峰值脈沖:600W 電源線路保護:無 應(yīng)用:通用 不同頻率時的電容:- 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應(yīng)商器件封裝:SMB 標準包裝:1 |
| 1SMB17A | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS |
| 1SMB17A TR13 | 功能描述:TVS DIODE 17VWM 27.6VC SMB 制造商:central semiconductor corp 系列:- 包裝:剪切帶（CT） 零件狀態(tài):停產(chǎn) 類型:齊納 單向通道:1 雙向通道:- 電壓 - 反向關(guān)態(tài)（典型值）:17V 電壓 - 擊穿（最小值）:18.9V 電壓 - 箝位（最大值）@ Ipp:27.6V 電流 - 峰值脈沖（10/1000μs）:21.7A 功率 - 峰值脈沖:600W 電源線路保護:無 應(yīng)用:通用 不同頻率時的電容:- 工作溫度:-65°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:DO-214AA，SMB 供應(yīng)商器件封裝:SMB 標準包裝:1 |
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