參數(shù)資料
型號(hào)： 1SMA26AT3
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： Plastic Surface Mount Bidirectional Zener Overvoltage Transienc Suppressor(塑料表貼封裝,峰值功率400W,變位電壓26V,雙向齊納瞬變電壓抑制器)
中文描述： 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝： PLASTIC, CASE 403D-02, SMA, 2 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 64K
代理商： 1SMA26AT3
1SMA5.0AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
400
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2)
Derate Above 75
°
C
Thermal Resistance from Junction to Lead
P
D
R
JL
1.5
20
50
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from Junction to Ambient
P
D
R
JA
0.5
4.0
250
W
mW/
°
C
°
C/W
Forward Surge Current (Note 4) @ T
A
= 25
°
C
I
FSM
40
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 s, nonrepetitive.
2. 1
″
square copper pad, FR4 board.
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
= 30 A for all types) (Note 5)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive duty
cycle.
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1SMA26AT3G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 26V 400W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1SMA26CAT3 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 26V 400W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1SMA26CAT3G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 26V 400W Bidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1SMA27 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Surface Mount Glass Passivated Zener Diode
1SMA28AT3 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 28V 400W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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