參數(shù)資料
型號: 1SMA12CAT3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: 400 Watt Peak Power Zener Transient Voltage Suppressors
中文描述: 400 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC, CASE 403D-02, SMA, 2 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 55K
代理商: 1SMA12CAT3
1SMA5.0AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
400
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2)
Derate Above 75
°
C
Thermal Resistance from Junction to Lead
P
D
R
JL
1.5
20
50
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from Junction to Ambient
P
D
R
JA
0.5
4.0
250
W
mW/
°
C
°
C/W
Forward Surge Current (Note 4) @ T
A
= 25
°
C
I
FSM
40
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 10 X 1000 s, nonrepetitive
2. 1
square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 3.5 V Max. @
I
F
= 30 A for all types) (Note 5)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms, nonrepetitive
duty cycle.
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