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參數(shù)資料
| 型號(hào)： | 1S2075K |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon Epitaxial Planar Diode for High Speed Switching |
| 中文描述： | 硅外延平面二極管高速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 1S2075K |
1S2075(K)
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
V
R
I
FM
I
FSM
*
I
O
Pd
35
V
Reverse voltage
30
V
Peak forward current
450
mA
Non-Repetitive peak forward surge current
600
mA
Average forward current
100
mA
Power dissipation
250
mW
Junction temperature
Tj
175
°
C
°
C
Storage temperature
Note:
Within 1s forward surge current.
Tstg
–65 to +175
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
I
R
C
—
—
0.8
V
I
F
= 10mA
V
R
= 30V
V
R
= 1V, f = 1MHz
I
F
= I
R
= 10mA, Irr = 1mA
Reverse current
—
—
0.1
μ
A
Capacitance
—
—
3.5
pF
Reverse recovery time
Note:
Reverse recovery time test circuit
t
rr
*
—
—
8.0
ns
3k
0.1
μ
F
Ro = 50
Rin = 50
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1S2093 | SILICON PLANAR TYPE TRIGGER DIODE |
| 1S2095A | SILICON EPITAXIAL PLANAR TYPE DIODE |
| 1S2186 | SILICON EPITAXIAL PLANAR TYPE |
| 1S2236 | SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE |
| 1S2460 | GENERAL PURPOSE RECTIFIER APPLICATIONS. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1S2075K(TD-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 1S2076 | 制造商:Renesas Electronics 功能描述:Diode Small Signal Switching 35V 0.15A 2-Pin DO-35 Bulk |
| 1S2076(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 1S2076A | 制造商:Panasonic Industrial Company 功能描述:DIODE |
| 1S2076A(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
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