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參數(shù)資料
| 型號： | 1PMT51AT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Zener Transient Voltage Suppressor POWERMITE Package |
| 中文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| 封裝： | LEAD FREE, CASE 457, PLASTIC PACKAGE, POWERMITE, 2 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 72K |
| 代理商： | 1PMT51AT3G |
1PMT5.0AT1/T3 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
L
= 30
°
C unless otherwise noted, V
F
= 1.25 Volts @ 200 mA)
Device
*
Marking
V
RWM
V
BR
@ I
T
(V)
(Note 6)
I
T
I
R
@ V
RWM
V
C
@ I
PP
I
PP
(A)
(Note 5)
Min
Nom
Max
(mA)
( A)
(V)
(Note 7)
1PMT5.0AT1, T3, G
MKE
5.0
6.4
6.7
7.0
10
50
9.2
21.7
1PMT7.0AT1, T3, G
MKM
7.0
7.78
8.2
8.6
10
30
12
16.7
1PMT12AT1, T3, G
MLE
12
13.3
14.0
14.7
1.0
1.0
19.9
10.1
1PMT16AT1, T3, G
MLP
16
17.8
18.75
19.7
1.0
1.0
26
7.7
1PMT18AT1, T3
MLT
18
20.0
21.0
22.1
1.0
1.0
29.2
6.8
1PMT22AT1, T3
MLX
22
24.4
25.6
26.9
1.0
1.0
35.5
5.6
1PMT24AT1, T3
MLZ
24
26.7
28.1
29.5
1.0
1.0
38.9
5.1
1PMT26AT1, T3
MME
26
28.9
30.4
31.9
1.0
1.0
42.1
4.8
1PMT28AT1, T3, G
MMG
28
31.1
32.8
34.4
1.0
1.0
45.4
4.4
1PMT30AT1, T3, G
MMK
30
33.3
35.1
36.8
1.0
1.0
48.4
4.1
1PMT33AT1, T3, G
MMM
33
36.7
38.7
40.6
1.0
1.0
53.3
3.8
1PMT36AT1, T3
MMP
36
40.0
42.1
44.2
1.0
1.0
58.1
3.4
1PMT40AT1, T3
MMR
40
44.4
46.8
49.1
1.0
1.0
64.5
2.7
1PMT48AT1, T3
MMX
48
53.3
56.1
58.9
1.0
1.0
77.4
2.3
1PMT51AT1, T3
MMZ
51
56.7
59.7
62.7
1.0
1.0
82.4
2.1
1PMT58AT1, T3
MNG
58
64.4
67.8
71.2
1.0
1.0
93.6
1.9
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
RWM
) which should be equal to or greater
than the DC or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at ambient temperature of 25
°
C.
7. Surge current waveform per Figure 2 and derate per Figure 4.
*The “G’’ suffix indicates PbFree package available.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 1PMT58AT1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 58V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT58AT1G | 功能描述:TVS 175W 58V POWERMITE RoHS:是 類別:過電壓，電流，溫度裝置 >> TVS - 二極管 系列:- 標(biāo)準(zhǔn)包裝:1,800 系列:TransZorb® 電壓 - 反向隔離（標(biāo)準(zhǔn)值）:28V 電壓 - 擊穿:31.1V 功率（瓦特）:400W 電極標(biāo)記:雙向 安裝類型:表面貼裝 封裝/外殼:DO-214AC，SMA 供應(yīng)商設(shè)備封裝:DO-214AC（SMA） 包裝:帶卷 (TR) 其它名稱:SMAJ28CA-E3/61-NDSMAJ28CA-E3/61GITR |
| 1PMT58AT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
| 1PMT58AT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Zener Transient Voltage Suppressor POWERMITE Package |
| 1PMT5913B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3.0 WATT Zener Diodes |
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