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參數(shù)資料
| 型號： | 1N914 |
| 廠商： | GE Security, Inc. |
| 英文描述： | SMALL SIGNAL DIODE |
| 中文描述： | 小信號二極管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 51K |
| 代理商： | 1N914 |
1999 May 26
2
Philips Semiconductors
Product specication
High-speed diode
1N914
FEATURES
Hermetically sealed leaded glass
SOD27 (DO-35) package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 225 mA.
APPLICATIONS
High-speed switching.
DESCRIPTION
The 1N914 is a high-speed switching diode fabricated in planar technology, and
encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diode is type branded.
handbook, halfpage
MAM246
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
see Fig.2; note 1
75
mA
IFRM
repetitive peak forward current
225
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
175
°C
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