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參數(shù)資料
| 型號： | 1N6638US |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHING DIODES |
| 中文描述： | 0.3 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, D-5D, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 1N6638US |
V BR
V RWM
V F1
V F2 @ I F2
tfr
trr
TYPES
@ IR
IFM
IF
IR = 10 mA
=100 A
=10 mA
IF = 10 mA
(Pulsed)
=50 mA
IREC = 1 mA
V (pk)
V dc
mA
ns
1N6638U & US
150
125
0.8
1.1
200
20
4.5
1N6642U & US
100
751.0
1.2
100
20
5
.0
1N6643U & US
755
0
1.0
1.2
100
20
6.0
I R1
I R2
I R3
I R4
C T1
C T2
TYPES
V R@V R
V R = 20 V
V R = V RWM
V R =V R =
= 20 V
= V RWM
TA = 150°C
0V
1.5V
nA dc
A dc
pF
1N6638U & US
350.5
5
0
100
2.52.0
1N6642U & US
25
0.5
50
100
5.0
2.8
1N6643U & US
50
0.5
75
160
5.0
2.8
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: I
FSM = 2.5A, half sine wave, P
w = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
1N6638US,1N6642US, 1N6643US AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
1N6638U,1N6642U, 1N6643U AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
SWITCHING DIODES
NON-CAVITY GLASS PACKAGE
METALLURGICALLY BONDED
1N6638U & US
1N6642U & US
1N6643U & US
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 25
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN MAX
D
1.78
2.16
0.070 0.085
F
0.48
0.71
0.019 0.028
G
4.19
4.95
0.165 0.195
S
0.08MIN.
0.003MIN.
FIGURE 1
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PDF描述 |
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| 1N746-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N746A-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N746ATR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N746ATR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N746AUR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6638US/TR | 功能描述:SWITCHING 制造商:microsemi corporation 系列:- 零件狀態(tài):在售 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:125V 電流 - 平均整流（Io）:300mA 不同 If 時的電壓 - 正向（Vf:1.1V @ 200mA 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間（trr）:20ns 不同?Vr 時的電流 - 反向漏電流:500nA @ 125V 不同?Vr，F(xiàn) 時的電容:2.5pF @ 0V，1MHz 安裝類型:表面貼裝 封裝/外殼:SQ-MELF，D 供應(yīng)商器件封裝:D-5D 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:100 |
| 1N6638USJANS | 制造商:Sensitron Semiconductors 功能描述:Diode Switching 75V 0.0003A 2-Pin D-5D |
| 1N6638US-JANS | 制造商:Sensitron Semiconductors 功能描述:Diode Switching 75V 0.0003A 2-Pin D-5D |
| 1N6639 | 制造商:Microsemi Corporation 功能描述:SIGNAL OR COMPUTER DIODE D LAW - Bulk |
| 1N6639_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SWITCHING DIODES |
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