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參數(shù)資料
| 型號： | 1N649UR-1 |
| 英文描述： | Standard Rectifier (trr more than 500ns) |
| 中文描述： | 標準整流器（花環(huán)率超過500ns的） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 169K |
| 代理商： | 1N649UR-1 |
Silicon Rectifier Diodes
Use Advantages
Used as a general purpose rectifier in power supplies, or for clipping and
steering applications.
High performance alternative to small signal diodes where space does not
permit use of power rectifiers.
May be used in hostile environments where hermeticity and reliability are
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.
Available up to JANTXV-1 level.
"S" level screening capability to Source Control Drawings.
DO-35 Glass Package
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Absolute Maximum Ratings
Symbol
Value
Unit
Power Dissipation at 3/8" from the body, T
L
= 75
o
C
Average Forward Rectified Current at T
L
Operating and Storage Temperature Range
P
tot
I
AV
T
O&S
Z
q
JX
600
mWatts
= 75
o
C
400
mAmps
-65 to 175
o
C
Thermal Impedance
35
o
C/W
Detail Specifications
Features
Six Sigma quality
Humidity proof glass
Metallurgically bonded
Thermally matched system
No thermal fatigue
High surge capability
Sigma Bond plated contacts
100% guaranteed solderability
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available
Breakdown
Voltage
(MIN.)
@ 100μA
(B
V
)
Volts
275
360
480
600
720
Maximum
Forward
Voltage
Drop
Maximum
Maximum
Surge
Current Capacitance
(I
)
(NOTE 1)
Amps
3
3
3
3
3
Typical
Junction
Reverse
Voltage
Average Rectified Current
_______________
(I
)
25° C
Amps
0.4
0.4
0.4
0.4
0.4
Reverse Leakage Current
_______________
(I
R
) @ V
R
25° C
μA
0.2
0.2
0.2
0.2
0.2
(I
)
150° C (MIN.) (MAX.)
Amps
0.15
0.15
0.15
0.15
0.15
(V
) @ I
= 400mA
@ -12V
(C
O
)
pF
9
9
9
9
9
(V
R
)
Volts
225
300
400
500
600
100° C
μA
15
15
20
20
25
Type
1N645,-1
1N646,-1
1N647,-1
1N648,-1
1N649,-1
Volts
1.0
1.0
1.0
1.0
1.0
Note 1: Surge Current @T
A
= +25° C to +150° C, for 1 Second
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.
1N645 to 649
or
1N645-1 to 649-1
DO-35 Glass Package
Dia.
0.06-0.09"
1.53-2.28 mm
1.0"
25.4 mm
(M in.)
Length
0.120-.200"
3.05-5.08-
mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
相關PDF資料 |
PDF描述 |
|---|---|
| 1N646 | silicon diode |
| 1N646 | Silicon Switching Diode DO-35 Glass Package |
| LL647-1 | Standard Rectifier (trr more than 500ns) |
| LL649-1 | Standard Rectifier (trr more than 500ns) |
| 1N6486US | Zener Diodes(齊納二極管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N649UR-1JAN | 制造商:Microsemi Corporation 功能描述: |
| 1N65 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:1.2A, 650V N-CHANNEL POWER MOSFET |
| 1N6503JANTX | 制造商:Micropac Industries Inc 功能描述: |
| 1N6505 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:GENERAL PURPOSE SILICON DIODES |
| 1N6506 | 制造商:Microsemi Corporation 功能描述:DIODE ARRAY DIP SD - Rail/Tube |
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