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參數(shù)資料
| 型號(hào)： | 1N6479-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB |
| 封裝： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 321K |
| 代理商： | 1N6479-E3 |
1N6478 thru 1N6484
Document Number 88527
06-Sep-05
Vishay General Semiconductor
www.vishay.com
1
Pat
ente
d*
DO-213AB
*Glass-plastic encapsulation
is covered by
Patent No. 3,996,602,
brazed-lead assembly to
Patent No. 3,930,306
Surface Mount Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
30 A
IR
10 A
VF
1.1 V
Tj max.
175 °C
Features
Superectifier structure for high reliability
condition
Patented glass-plastic encapsulation technique
Ideal for automated placement
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Mechanical Data
Case: DO-213AB, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive
peak reverse voltage rating
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Standard recovery time device: 1st band is White
Symbol
1N6478 1N6479 1N6480
1N6481
1N6482 1N6483 1N6484
Unit
Polarity color bands (2nd Band)
Gray
Red
Orange
Yellow
Green
Blue
Violet
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
30
A
Maximum full load reverse current, full cycle
average at TA = 75 °C
IR(AV)
100
A
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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| 1N6492-DC-JQRS.XRAY | 1.2 A, 45 V, SILICON, RECTIFIER DIODE, TO-205AF |
| 1N6640D2B-JQRS.GCDM | 0.3 A, SILICON, SIGNAL DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6479-E3/75 | 功能描述:整流器 1.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6479-E3/96 | 功能描述:整流器 1.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6479-E3/97 | 功能描述:整流器 100 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6479HE3/75 | 功能描述:整流器 100 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N6479HE3/96 | 功能描述:整流器 100 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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