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參數(shù)資料
| 型號： | 1N6389 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power 5 Watt Steady State Zener Transient Voltage Supperssor(雙向，峰值功率1500W，穩(wěn)態(tài)5W，最大反向電壓45V齊納瞬變電壓抑制器) |
| 中文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 1N6389 |
MOTOROLA
SEMICONDUCTOR
TECHNICAL DATA
Motorola TVS/Zener Device Data
4-1
500 Watt Peak Power Data Sheet
Devices listed in bold, italic are Motorola preferred devices.
1500 Watt MOSORB
GENERAL DATA APPLICABLE TO ALL SERIES IN
THIS GROUP
Zener Transient Voltage Suppressors
Unidirectional and Bidirectional
Mosorb devices are designed to protect voltage sensitive components from high volt-
age, high energy transients. They have excellent clamping capability, high surge capabili-
ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,
cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use
in communication systems, numerical controls, process controls, medical equipment,
business machines, power supplies and many other industrial/consumer applications, to
protect CMOS, MOS and Bipolar integrated circuits.
Specification Features:
Standard Voltage Range — 6.2 to 250 V
Peak Power — 1500 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
μ
A Above 10 V
UL Recognition
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are readily solderable
POLARITY:
Cathode indicated by polarity band. When operated in zener mode, will be
positive with respect to anode
MOUNTING POSITION:
Any
WAFER FAB LOCATION:
Phoenix, Arizona
ASSEMBLY/TEST LOCATION:
Guadalajara, Mexico
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (1)
@ TL
≤
25
°
C
PPK
1500
Watts
Steady State Power Dissipation
@ TL
≤
75
°
C, Lead Length = 3/8
″
Derated above TL = 75
°
C
PD
5
50
Watts
mW/
°
C
Forward Surge Current (2)
@ TA = 25
°
C
IFSM
200
Amps
Operating and Storage Temperature Range
TJ, Tstg
– 65 to +175
°
C
Lead temperature not less than 1/16
″
from the case for 10 seconds: 230
°
C
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25
°
C per Figure 2.
NOTES:
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
1N6373A
SERIES
1500 WATT
PEAK POWER
MOSORB
ZENER OVERVOLTAGE
TRANSIENT
SUPPRESSORS
6.2–250 VOLTS
1500 WATT PEAK POWER
5 WATTS STEADY STATE
CASE 41A
PLASTIC
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N6373 | Unidirectional 1500 Watt Mosorb Zener Transient Voltage Suppressors(單向，1500W峰值功率，Mosorb齊納瞬變電壓抑制器) |
| 1N6374 | Unidirectional 1500 Watt Mosorb Zener Transient Voltage Suppressors(單向，1500W峰值功率，Mosorb齊納瞬變電壓抑制器) |
| 1N6375 | Unidirectional 1500 Watt Mosorb Zener Transient Voltage Suppressors(單向，1500W峰值功率，Mosorb齊納瞬變電壓抑制器) |
| 1N6376 | Unidirectional 1500 Watt Mosorb Zener Transient Voltage Suppressors(單向，1500W峰值功率，Mosorb齊納瞬變電壓抑制器) |
| 1N6377 | Unidirectional 1500 Watt Mosorb Zener Transient Voltage Suppressors(單向，1500W峰值功率，Mosorb齊納瞬變電壓抑制器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6391 | 制造商:Microsemi Corporation 功能描述:Diode Schottky 45V 25A 2-Pin DO-4 制造商:Microsemi Corporation 功能描述:SCHOTTKY RECTIFIER DO-4 LAW - Bulk 制造商:Microsemi 功能描述:Diode Schottky 45V 25A 2-Pin DO-4 |
| 1N6391_1 | 制造商:NAINA 制造商全稱:Naina Semiconductor ltd. 功能描述:Schottky Barrier Rectifier Diode |
| 1N6391_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:HIGH RELIABILITY SCHOTTKY RECTIFIER |
| 1N6391JANTX | 制造商:Microwave Semiconductor 功能描述: |
| 1N6391JANTXV | 制造商:Microsemi Corporation 功能描述:Diode Schottky 45V 25A 2-Pin DO-4 |
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