參數(shù)資料
型號(hào)： 1N6310US
元件分類： 參考電壓二極管
英文描述： surface mount silicon Zener diodes
中文描述： 表面貼裝硅穩(wěn)壓二極管
文件頁數(shù)： 1/2頁
文件大?。?/td> 108K
代理商： 1N6310US
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
50 C/W maximum
THERMAL IMPEDANCE: (
ZOJX): 15
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
MIN MAX
1.78
0.48
4.19
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
DIM
D
F
G
S
2.16
0.71
4.95
FIGURE 1
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/533
500 mW ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125oC
Power Derating: 10 mW/°C above TEC=+125oC
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
VZ2
NOM.
±5% @
IZ2
VOLTS
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
VZ1
MIN.
@IZ1
250
μ
A
IZ2
TEST
CURRENT
ZZ
@
IZ2
ZZK
@
250
μ
A
IZM
VZ(reg)
IZSM
SURGE
VR
IR1
@
25oC
IR2
@
TA=
150oC
ND
@250
μ
A
1-3 kHz
TYPE
L
L
VZ
(1)
VOLTS
1.1
1.2
1.3
1.5
1.8
2.0
2.4
2.8
3.3
4.3
5.2
6.0
mA
20
20
20
20
20
20
20
20
20
20
20
20
OHMS
30
30
29
24
22
20
18
16
14
8.0
3.0
3.0
OHMS
1200
1300
1400
1400
1400
1700
1400
1500
1300
1200
800
400
mA
177
157
141
128
117
108
99
90
83
76
68
63
VOLTS
1.5
1.5
1.5
1.6
1.6
1.6
0.9
0.5
0.4
0.4
0.3
0.35
AMPS
2.5
2.2
2.0
1.8
1.65
1.5
1.4
1.27
1.17
1.10
0.97
1.23
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
4.0
μ
A
100
60
30
5.0
3.0
2.0
2.0
5.0
5.0
5.0
5.0
2.0
μ
A
200
150
100
20
12
12
12
12
12
10
10
50
μ
V/ Hz
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
5.0
5.0
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
1N6315US
1N6316US
1N6317US
1N6318US
1N6319US
1N6320US
NOTE 1:
L
L
VZ= VZ@ 20 mAdc minus VZ@ 2mAdc
相關(guān)PDF資料
PDF描述
1N6310 500mW ZENER DIODES
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6311 制造商:Microsemi Corporation 功能描述:ZENER SGL 3V 5% 500MW 2PIN DO-35 - Bulk
1N6311US 制造商:Microsemi Corporation 功能描述:ZENER SGL 3V 5% 500MW 2PIN D-5D - Bulk
1N6312 制造商:Microsemi Corporation 功能描述:ZENER SGL 3.3V 5% 500MW 2PIN DO-35 - Bulk
1N6312 JV 制造商:Microwave Semiconductor 功能描述:
1N6312JANTX 制造商:Microsemi Corporation 功能描述:Diode Zener Single 3.3V 5% 500mW 2-Pin DO-35 制造商:Microsemi 功能描述:Diode Zener Single 3.3V 5% 500mW 2-Pin DO-35
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