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參數(shù)資料
| 型號： | 1N6281ARL4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Mosorb TM Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 82K |
| 代理商： | 1N6281ARL4 |
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6267A Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
≤
25
°
C
P
PK
1500
W
Steady State Power Dissipation
@ T
L
≤
75
°
C, Lead Length = 3/8 in
Derated above T
L
= 75
°
C
P
D
5.0
20
W
mW/
°
C
Thermal Resistance, JunctiontoLead
R
JL
20
°
C/W
Forward Surge Current (Note 2) @ T
A
= 25
°
C
I
FSM
200
A
Operating and Storage
Temperature Range
T
J
, T
stg
65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25
°
C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
NOTES: Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max., I
F
(Note 3) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
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