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參數(shù)資料
| 型號： | 1N6270ARL4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Mosorb TM Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 82K |
| 代理商： | 1N6270ARL4G |
1N6267A Series
http://onsemi.com
5
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE6.8CA
through
1.5KE200CA
Figure 6. Dynamic Impedance
1000
500
200
100
50
20
10
5
2
1
1000
500
200
100
50
20
10
5
2
1
0.3
V
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
0.5
0.7
1
2
3
5
7
10
20
30
0.3
V
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
0.5
0.7
1
2
3
5
7
10
20 30
I
V
BR(NOM)
=6.8 to 13V
20V
24V
T
L
=25
°
C
t
P
=10
s
V
BR(NOM)
=6.8 to 13V
20V
24V
43V
75V
180V
120V
43V
Figure 7. Typical Derating Factor for Duty Cycle
D
1 ms
10 s
1
0.7
0.5
0.3
0.05
0.1
0.07
0.2
0.01
0.02
0.03
100 s
0.1
0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
T
L
=25
°
C
t
P
=10
s
I
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
°
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6270C | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| 1N6270CA | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:Transient Voltage Suppressor Diodes |
| 1N6270CAL | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| 1N6270CL | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
| 1N6270E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Unidirectional & Bidirectional Transient Voltage Suppressors |
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