參數(shù)資料
型號(hào): 1N6263W
廠商: Diodes Inc.
英文描述: SURFACE MOUNT SCHOTTKY BARRIER DIODE
中文描述: 表面貼裝肖特基勢壘二極管
文件頁數(shù): 2/3頁
文件大?。?/td> 71K
代理商: 1N6263W
DS11014 Rev. 5 - 2
2 of 3
1N6263W
0.01
0.1
1.0
10
0
0.5
1.0
I
F
V , FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
0
50
150
250
350
0
25
50
75
125
150
P
d
T , AMBIENT TEMPERATURE (°C)
Fig.1 Power Derating Curve
100
100
200
300
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V
(BR)R
60
V
I
R
= 10 A
Reverse Leakage Current (Note 2)
I
RM
200
nA
V
R
= 50V
Forward Voltage Drop (Note 2)
V
FM
0.41
1.0
V
I
F
= 1.0mA
I
F
= 15mA
Total Capacitance
C
T
2.2
pF
V
R
= 0V, f = 1.0MHz
Reverse Recovery Time
t
rr
1.0
ns
I
F
= I
R
= 5.0mA
I
rr
= 0.1 x I
R
, R
L
= 100
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
0
100
80
60
40
20
0
0.5
1
I
F
V , FORWARD VOLTAGE (V)
Fig. 3 Typical Forward Characteristics
0.01
0.1
1
10
100
0
10
20
30
40
50
I
R
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics
T = 125°C
T = 50°C
T = 150°C
T = 100°C
T = 75°C
T = 25°C
Note:
2. Short duration test pulse used to minimize self-heating effect.
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