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參數(shù)資料
| 型號(hào)： | 1N5908G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Mosorb TM Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, CASE 41A-04, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | 1N5908G |
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N5908
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T
L
≤
25
°
C
P
PK
1500
W
Steady State Power Dissipation
@ T
L
≤
75
°
C, Lead Length = 3/8
″
Derated above T
L
= 75
°
C
P
D
5.0
50
W
mW/
°
C
Thermal Resistance, JunctiontoLead
R
JL
20
°
C/W
Forward Surge Current (Note 2)
@ T
A
= 25
°
C
I
FSM
200
A
Operating and Storage
Temperature Range
T
J
, T
stg
65 to +175
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 4 and derated above T
A
= 25
°
C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Bidirectional device will not be available in this device
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3
)
= 53 A)
Device
(Note 4)
V
RWM
(Note 5)
I
R
@ V
RWM
( A)
Breakdown Voltage
V
C
(Volts)
(Note 7)
V
BR
(Note 6)
(Volts)
@ I
T
@ I
PP
= 120 A
8.5
@ I
PP
= 60 A
8.0
@ I
PP
= 30 A
7.6
(Volts)
Min
Nom
Max
(mA)
1N5908
5.0
300
6.0
1.0
3. Square waveform, PW = 8.3 ms, Nonrepetitive duty cycle.
4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option)
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V
measured at pulse test current I
at an ambient temperature of 25
°
C and minimum voltages in V
are to be controlled.
7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data 1500 W at the beginning of this group
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5908G | 制造商:ON Semiconductor 功能描述:TVS Diode |
| 1N5908RL | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 5.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N5908RL4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 6.2V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N5908RL4G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 6.2V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N5908RL4G | 制造商:ON Semiconductor 功能描述:UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRES |
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