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參數(shù)資料
| 型號(hào)： | 1N5908 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Zener Transient Voltage Suppressor Unidirectional and Bidirectional(單/雙向齊納瞬變電壓抑制器) |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 1N5908 |
Motorola TVS/Zener Device Data
4-4
500 Watt Peak Power Data Sheet
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
Figure 6. Dynamic Impedance
1000
500
200
100
50
20
10
5
2
1
1000
500
200
100
50
20
10
5
2
1
0.3
0.5
0.7
1
2
3
5
7
10
20
30
VZ, INSTANTANEOUS INCREASE IN VZ ABOVE VZ(NOM) (VOLTS)
0.3
0.5
0.7
1
2
3
5
7
10
20
30
VZ, INSTANTANEOUS INCREASE IN VZ ABOVE VZ(NOM) (VOLTS)
I
VZ(NOM) = 6.8 to 13 V
20 V
24 V
TL= 25
°
C
tP= 10
μ
s
VZ(NOM) = 6.8 to 13 V
TL= 25
°
C
tP= 10
μ
s
20 V
24 V
43 V
75 V
180 V
120 V
I
43 V
Figure 7. Typical Derating Factor for Duty Cycle
D
1 ms
10
μ
s
1
0.7
0.5
0.3
0.2
0.05
0.1
0.07
0.01
0.02
0.03
100
μ
s
0.1
0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be pro-
tected. In this situation, there is a time delay associated with
the capacitance of the device and an overshoot condition as-
sociated with the inductance of the device and the inductance
of the connection method. The capacitance effect is of minor
importance in the parallel protection scheme because it only
produces a time delay in the transition from the operating volt-
age to the clamp voltage as shown in Figure A.
The inductive effects in the device are due to actual turn-on
time (time required for the device to go from zero current to full
current) and lead inductance. This inductive effect produces
an overshoot in the voltage across the equipment or
component being protected as shown in Figure B. Minimizing
this overshoot is very important in the application, since the
main purpose for adding a transient suppressor is to clamp
voltage spikes. These devices have excellent response time,
typically in the picosecond range and negligible inductance.
However, external inductive effects could produce unaccept-
able overshoot. Proper circuit layout, minimum lead lengths
and placing the suppressor device as close as possible to the
equipment or components to be protected will minimize this
overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit op-
eration.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25
°
C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves of
Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25
°
C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be in
error as the 10 ms pulse has a higher derating factor than the
10
μ
s pulse. However, when the derating factor for a given
pulse of Figure 7 is multiplied by the peak power value of
Figure 1 for the same pulse, the results follow the expected
trend.
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PDF描述 |
|---|---|
| 1N5908 | 1500W Zener Transient Voltage Suppressors(1500W，電壓工作范圍為6.2-250V的齊納瞬變電壓抑制器) |
| 1N5913B | 1 TO 3 WATT ZENER REGULATOR DIODES 3.3-400 VOLTS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5908/4 | 制造商:Vishay Angstrohm 功能描述:DIODE TARIFF:85411099 |
| 1N5908/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Zener Transient Voltage Suppressors Unidirectional and Bidirectional |
| 1N5908E3 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Unidirectional & Bidirectional Transient Voltage Suppressors |
| 1N5908E3/TR12 | 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE - Tape and Reel |
| 1N5908G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 6.2V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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