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參數資料
| 型號： | 1N5818 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Rectifier Diode(30V峰值反向電壓,1A,肖特基勢壘整流二極管) |
| 中文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 1N5818 |
125
115
105
95
85
75
20
15
10
7.0
5.0
4.0
3.0
2.0
T
°
C
V
R
, DC REVERSE VOLTAGE (VOLTS)
Figure 1. Maximum Reference Temperature
1N5817
40
30
23
60
80
R
JA
(
°
C/W) = 110
125
115
105
95
85
75
20
15
10
7.0
5.0
30
4.0
3.0
40
30
23
R
JA
(
°
C/W) = 110
8060
Figure 2. Maximum Reference Temperature
1N5818
125
115
105
95
85
75
20
15
10
7.0
5.0
30
4.0
40
R
JA
(
°
C/W) = 110
60
80
Figure 3. Maximum Reference Temperature
1N5819
40
30
23
T
°
V
R
, DC REVERSE VOLTAGE (VOLTS)
V
R
, DC REVERSE VOLTAGE (VOLTS)
T
°
C
1N5817, 1N5818, 1N5819
http://onsemi.com
3
NOTE 1. — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V
RWM
. Proper derating may be
accomplished by use of equation (1).
T
A(max)
=
where T
A(max)
=
T
J(max)
=
Maximum allowable junction temperature
(125
°
C or the temperature at which thermal
runaway occurs, whichever is lowest)
P
F(AV)
=
P
R(AV)
=
R
JA
=
T
J(max)
R
JA
P
F(AV)
R
JA
P
R(AV)
Maximum allowable ambient temperature
(1)
Average forward power dissipation
Average reverse power dissipation
Junctiontoambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
T
R
= T
J(max)
R
JA
P
R(AV)
Substituting equation (2) into equation (1) yields:
T
A(max)
= T
R
R
JA
P
F(AV)
Inspection of equations (2) and (3) reveals that T
R
is the
ambient temperature at which thermal runaway occurs or
where T
J
= 125
°
C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115
°
C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
V
R(equiv)
= V
in(PK)
x F
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find T
A(max)
for 1N5818 operated in a
12volt dc supply using a bridge circuit with capacitive filter
such that I
DC
= 0.4 A (I
F(AV)
= 0.5 A), I
(FM)
/I
(AV)
= 10, Input
Voltage = 10 V
(rms)
, R
JA
= 80
°
C/W.
Step 1. Find V
R(equiv)
. Read F = 0.65 from Table 1,
Step 1. Find
∴
V
R(equiv)
= (1.41)(10)(0.65) = 9.2 V.
Step 2. Find T
R
from Figure 2. Read T
R
= 109
°
C
Step 1. Find
@ V
R
= 9.2 V and R
JA
= 80
°
C/W.
Step 3. Find P
F(AV)
from Figure 4. **Read P
F(AV)
= 0.5 W
I
(FM)
I
(AV)
(2)
(3)
(4)
@
= 10 and IF(AV) = 0.5 A.
Step 4. Find T
A(max)
from equation (3).
Step 4. Find
T
A(max)
= 109 (80) (0.5) = 69
°
C.
**Values given are for the 1N5818. Power is slightly lower for the
1N5817 because of its lower forward voltage, and higher for the
1N5819.
Circuit
Load
Half Wave
Resistive
Capacitive*
Full Wave, Bridge
Resistive
Capacitive
Full Wave, Center Tapped*
Resistive
Capacitive
Sine Wave
Square Wave
**Note that V
R(PK)
≈
2.0 V
in(PK)
.
0.5
0.75
1.3
1.5
Use line to center tap voltage for V
in
.
0.5
0.75
0.65
0.75
1.0
1.5
1.3
1.5
Table 1. Values for Factor F
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|---|---|
| 1N5819 | Schottky Barrier Rectifier Diode(40V峰值反向電壓,1A,肖特基勢壘整流二極管) |
| 1N5819HW-7-F | 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 1N5819RLG | Axial Lead Rectifiers |
| 1N5817RLG | Axial Lead Rectifiers |
| 1N5818RLG | Axial Lead Rectifiers |
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