參數(shù)資料
型號(hào)： 1N5818-B
廠商： RECTRON LTD
元件分類： 參考電壓二極管
中文描述： 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41
封裝： ROHS COMPLIANT, PALSTIC PACKAGE-2
文件頁數(shù)： 1/3頁
文件大?。?/td> 217K
代理商： 1N5818-B
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N5817
THRU
1N5819
MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted)
ELECTRICAL CHARACTERISTICS(@TA=25 OC unless otherwise noted)
Dimensions in inches and (millimeters)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at TL =90OC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
T
Typical Thermal Resistance (Note 3)
ypical Junction Capacitance (Note 1)
SYMBOL
VRRM
VDC
IFSM
CJ
TSTG
VRMS
UNITS
Volts
Amps
1.0
25
50
15
110
Amps
0
C
Storage Temperature Range
I
RqJA
RqJL
O
150
pF
Operating Temperature Range
TJ
1N5817
1N5818
1N5819
1N5817
1N5818
1N5819
20
30
40
14
21
28
20
30
40
-55 to + 150
0
C
0
C/W
NOTES : 1. Me
3. Thermal Resistance : At 9.5mm lead lengths, PCB mounted.
asured at 1 MHz and applied reverse voltage of 4.0 volts.
2006-12
CHARACTERISTICS
Maximum Average Reverse Current
at Rated DC Blocking Voltage
VF
SYMBOL
IR
mAmps
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
0.2
10
@TA = 25
oC
@TA = 100
oC
.45
.55
.60
VF
Maximum Instantaneous Forward Voltage at 3.1A DC
Volts
.75
0.875
0.90
mAmps
UNITS
2. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
FEATURES
* Low power loss, high efficiency
* Low leakage
* Low forward voltage
* High current capability
* High speed switching
* High surge capabitity
* High reliability
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.33 gram
DO-41
1.0 (25.4)
MIN.
.166 (4.2)
.205 (5.2)
1.0 (25.4)
MIN.
.107 (2.7)
.080 (2.0)
DIA.
.034 (0.9)
.028 (0.7) DIA.
相關(guān)PDF資料
PDF描述
1N5818-E3 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
1N5817/54 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL
1N5817/90 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL
1N5817/100 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL
1N5817/70 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N5818B-G 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifiers
1N5818-BP 制造商:Micro Commercial Components (MCC) 功能描述:1N5818 Series 1 A 30 V Through-Hole Schottky Barrier Rectifier - DO-41
1N5818-E 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Schottky Barrier Rectifiers Reverse Voltage 20 to 40V Forward Current 1.0A
1N5818-E3/1 功能描述:肖特基二極管與整流器 30 Volt 1.0 Amp 25 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
1N5818-E3/23 功能描述:肖特基二極管與整流器 Vr/30V Io/1A RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
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