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參數(shù)資料
| 型號： | 1N5812R |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | FAST RECOVERY POWER RECTIFIER |
| 中文描述： | 20 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA |
| 封裝： | DO-4, 1 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 1N5812R |
TECHNICAL DATA
FAST RECOVERY POWER RECTIFIER
Qualified per MIL-PRF-19500/ 478
Devices
Qualified Level
1N5812
1N5812R
1N5814
1N5814R
1N5815
1N5815R
1N5816
1N5816R
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
1N5812
1N5812R
50
50
1N5814
1N5814R
100
100
20
1N5816
1N5816R Unit
150
150
Reverse Voltage
Working Peak Reverse Voltage
Average Forward Current T
C
= +100
0
C
(1)
Forward Current Surge Peak T
C
= +100
0
C
t
p
= 8.3 ms
Reverse Recovery Time
Operating & Storage Junction Temperature
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 250 mA/
0
C from +100
0
C to +150
0
C, & 300 mA/
0
C above +150
0
C
ELECTRICAL CHARACTERISTICS
Characteristics
Thermal Impedance
I
H
≥
rated I
O
; t
H
≤
250ms; 10 mA
≤
I
M
≤
100 mA; t
MD
= 250
μ
s (max)
Forward Voltage
t
p
≤
8.3 ms, duty cycle
≤
2.0% pulsed
I
F
=
10 A (pk)
I
F
=
20 A (pk)
Reverse Current
V
R
= Rated V
R
(See 1.3 of MIL-PRF-19500/478)
Breakdown Voltage
I
R
= 100
μ
Adc
I
R
= 100
μ
Adc
I
R
= 100
μ
Adc
Junction Capacitance
V
R
= 10 Vdc, V
SIG
= 50 mVdc (p-p) max, f = 1.0 MHz
Forward Recovery Voltage
t
p
≥
20
η
s, t
r
= 8.0
η
s; I
F
= 1,000 mA
Forward Recovery Time
I
F
= 1,000 mA
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
V
R
V
RWM
I
O
Vdc
Vpk
Adc
I
FSM
400
Adc
t
rr
35
η
s
0
C
T
J
,
T
stg
-65 to +175
Symbol
R
θ
JC
Max.
1.5
Unit
0
C/W
*See appendix A for
package outline
Max.
Symbol
Min.
Unit
Z
θ
JX
1.35
0
C/W
V
F1
V
F2
0.860
0.950
Vdc
Vpk
I
R
10
μ
Adc
1N5812, R
1N5814, R
1N5816, R
V
(BR)
60
110
160
Vdc
C
J
300
pF
V
FR
2.2
V(pk)
t
rr
15
η
s
120101
Page 1 of 1
DO-203AA
(DO-4)
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