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參數(shù)資料
| 型號： | 1N5616GP/71 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封裝： | PLASTIC, DO-15, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 292K |
| 代理商： | 1N5616GP/71 |
www.vishay.com
2
Document Number 88520
14-Oct-05
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
*JEDEC registered values
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP
Unit
* Minimum reverse
breakdown voltage
at 50 A
VBR
220
440
660
880
1100
V
* Maximum instantaneous
forward voltage
at 1.0 A
VF
1.2
V
* Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
IR
0.5
25
A
* Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Maximum junction
capacitance
at 12 V, 1 MHz
CJ
45
35
25
20
15
pF
Parameter
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP
1N522GP
Unit
Typical thermal resistance (1)
RθJA
45
°C/W
Figure 1. Forward Current Derating Curve
Ambient Temperature, °C
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
0.375” (9.5 mm) Lead Length
60 Hz
Resistive or
Inductive Load
1.0
0.75
0.5
0.25
0
25
50
75
100
125
150
175
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
1
10
100
50
40
30
20
10
0
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