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參數(shù)資料
| 型號： | 1N5616GP/51-E3 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC |
| 封裝： | PLASTIC, DO-15, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 292K |
| 代理商： | 1N5616GP/51-E3 |
1N5614GP thru 1N5622GP
Document Number 88520
14-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AC (DO-15)
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
200 V to 1000 V
IFSM
50 A
IR
0.5 A
VF
1.2 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current, IR less than 0.1 A
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
* Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA = 55 °C
IF(AV)
1.0
A
* Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
50
A
* Operating junction temperature range
TJ
- 65 to + 175
°C
* Storage temperature range
TSTG
- 65 to + 175
C
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