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參數(shù)資料
| 型號： | 1N5535CURTR-1 |
| 廠商： | Microsemi Corporation |
| 英文描述： | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 中文描述： | 低電壓表面貼裝500毫瓦雪崩二極管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 194K |
| 代理商： | 1N5535CURTR-1 |
Low Voltage Surface Mount
500 mW Avalanche Diodes
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2003
10-31-2003 REV B
W
M
.
C
SCOTTSDALE DIVISION
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
1
GRAPHS and CIRCUIT
Noise density, (N
) is specified in
microvolt-rms per square-root-hertz.
Actual measurement is performed
using a 1 kHz to 3 kHz frequency
bandpass filter at a constant Zener test
current (I
ZT
) at 25
C ambient
temperature.
P
d
FIGURE 1
Noise Density
Measurement Circuit
T
EC
T
A
T
EC
, End Cap Temperature (
o
C) or T
A
Ambient temperature on FR4 PC board
FIGURE 2
Power Derating Curve
FIGURE 3
Capacitance vs. Zener Voltage (Typical)
T
Zener Voltage V
Z
FIGURE 4
Zener Diode Characteristics and Symbol Identification
PACKAGE DIMENSIONS
INCHES
MIN
0.063
0.130
0.016
MILLIMETERS
MIN
1.60
3.30
0.41
DIM
A
B
C
MAX
0.067
0.146
0.022
MAX
1.70
3.70
0.55
PAD LAYOUT
INCHES
.200
.055
.080
mm
5.08
1.40
2.03
A
B
C
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| 1N5535DUR | 8-Bit FET Bus Switch 20-SOIC -40 to 85 |
| 1N5535DUR-1 | Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5535DURTR-1 | Low Voltage Surface Mount 500 mW Avalanche Diodes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5535D | 制造商:JGD 制造商全稱:Jinan Gude Electronic Device 功能描述:0.4W LOW VOLTAGE AVALANCHE DIODES |
| 1N5535D-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5535DTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5535DUR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5535DUR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
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