型號: | 1N5470B |
元件分類: | 變?nèi)荻O管 |
英文描述: | VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
文件頁數(shù): | 1/1頁 |
文件大小: | 0K |
代理商: | 1N5470B |
相關PDF資料 |
PDF描述 |
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1N5471B | VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
1N5474B | VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
1N5469CCHIP | VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
1N5471CCHIP | VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
1N5475CCHIP | VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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1N5470BJTX | 制造商:TDY 功能描述:1N5470BJTX |
1N5517 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
1N5518 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
1N5518_03 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LOW REVERSE LEAKAGE CHARACTERISTICS |
1N5518-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LOW VOLTAGE AVALANCHE DIODES DO-35 |