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參數(shù)資料
| 型號： | 1N5407-T |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3.0A RECTIFIER |
| 中文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 61K |
| 代理商： | 1N5407-T |
e
3
DS28007 Rev. 7 - 2
1 of 3
1N5400-1N5408
www.diodes.com
Diodes Incorporated
Features
1N5400 - 1N5408
3.0A RECTIFIER
DO-201AD
Min
Dim
A
B
C
D
Max
25.40
7.20
9.50
1.20
1.30
4.80
5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 1.1 grams (approximate)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
V
RRM
V
RWM
V
R
V
R(RMS)
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
@ T
A
= 105 C
(Note 1)
I
O
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
Forward Voltage
I
FSM
200
A
@ I
F
= 3.0A
@ T
A
= 25 C
@ T
A
= 150 C
(Note 2)
V
FM
1.0
10
100
V
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Total Capacitance
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
I
RM
C
T
R
JA
T
j,
T
STG
50
25
pF
15
°C/W
C
-65 to +150
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5407-T/R | 制造商:Taitron Components Inc 功能描述: |
| 1N5407-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:3.0A SILICON RECTIFIER |
| 1N5407TA | 功能描述:DIODE GEN PURP 800V 3A DO201AD 制造商:smc diode solutions 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:800V 電流 - 平均整流（Io）:3A 不同 If 時的電壓 - 正向（Vf）:1.2V @ 3A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時間（trr）:- 不同?Vr 時的電流 - 反向漏電流:5μA @ 800V 不同?Vr，F(xiàn) 時的電容:30pF @ 0V，1MHz 安裝類型:通孔 封裝/外殼:DO-201AD，軸向 供應(yīng)商器件封裝:DO-201AD 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:1,250 |
| 1N5407-TB | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:3.0A SILICON RECTIFIER |
| 1N5407T-G | 功能描述:二極管 - 通用，功率，開關(guān) VRRM=800V, IAV=3A RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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