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參數(shù)資料
| 型號： | 1N5405G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | 3A GENERAL PURPOSE GPP DIODES |
| 中文描述： | 3A條一般用途的玻璃鈍化二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 59K |
| 代理商： | 1N5405G |
DS29003 Rev. D-2
1 of 2
1N5400G-1N5408G
1N5400G - 1N5408G
3.0A GLASS PASSIVATED RECTIFIER
Features
DO-201AD
Min
Dim
A
B
C
D
Max
25.40
—
7.20
9.50
1.20
1.30
4.80
5.30
All Dimensions in mm
A
A
B
C
D
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Glass Passivated Die Construction
Diffused Junction
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 125A Peak
Plastic Material has UL Flammability
Classification 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.12 grams (approx)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N
5400G
1N
5401G
1N
5402G
1N
5403G
1N
5404G
1N
5405G
1N
5406G
1N
5407G
1N
5408G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
V
RRM
V
RWM
V
R
V
R(RMS)
50
100
200
300
400
500
600
800
1000
V
35
70
140
210
280
350
420
580
700
V
@ T
A
= 55°C
I
O
3.0
A
I
FSM
125
A
@ I
F
= 3.0A
@T
A
= 25°C
@ T
A
= 125°C
V
FM
1.1
5.0
100
2.0
40
32
V
I
RM
A
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
t
rr
C
j
s
pF
K/W
°C
R
JA
T
j,
T
STG
-65 to +150
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A.
相關(guān)PDF資料 |
PDF描述 |
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| 1N5622 | Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(反向電壓1000V,平均正向電流2A，軸向引腳，密封標準恢復(fù)整流二極管) |
| 1N5614 | Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(反向電壓200V,平均正向電流2A，軸向引腳，密封標準恢復(fù)整流二極管) |
| 1N5616 | Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(反向電壓400V,平均正向電流2A，軸向引腳，密封標準恢復(fù)整流二極管) |
| 1N5618 | Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(反向電壓600V,平均正向電流2A，軸向引腳，密封標準恢復(fù)整流二極管) |
| 1N5620 | Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(反向電壓800V,平均正向電流2A，軸向引腳，密封標準恢復(fù)整流二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5405-G | 功能描述:二極管 - 通用，功率，開關(guān) VRRM=500V, IAV=3A RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1N5405G-B | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:3.0A GLASS PASSIVATED RECTIFIER |
| 1N5405G-E | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A |
| 1N5405GM | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A |
| 1N5405G-T | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:3.0A GLASS PASSIVATED RECTIFIER |
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