參數(shù)資料
型號: 1N5399S
廠商: DIODES INC
元件分類: 參考電壓二極管
英文描述: 1.5A RECTIFIER
中文描述: 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-41
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 1/2頁
文件大小: 58K
代理商: 1N5399S
DS28003 Rev. D-2
1 of 2
1N5391/S-1N5399/S
Features
1N5391/S - 1N5399/S
1.5A RECTIFIER
“S” Suffix Designates DO-41 Package
No Suffix Designates DO-15 Package
A
A
B
C
D
DO-41 Plastic
Min
DO-15
Min
Dim
A
B
C
D
Max
Max
25.40
25.40
4.06
5.21
5.50
7.62
0.71
0.864
0.686
0.889
2.00
2.72
2.60
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Diffused Junction
Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Low Reverse Leakage Current
Surge Overload Rating to 50A Peak
Plastic Material - UL Flammability
Classification Rating 94V-0
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: DO-41 0.30 grams (approx.)
DO-15 0.40 grams (approx.)
Mounting Position: Any
Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N
5391/S
1N
5392/S
1N
5393/S
1N
5395/S
1N
5397/S
1N
5398/S
1N
5399/S
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
V
RRM
V
RWM
V
R
V
R(RMS)
50
100
200
400
600
800
1000
V
35
70
140
280
420
560
700
V
@ T
A
= 70 C
I
O
1.5
A
I
FSM
50
A
@ I
F
= 1.5A
@ T
A
= 25 C
@ T
A
= 100 C
V
FM
1.1
5.0
50
V
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
I
RM
A
C
j
20
25
55
pF
K/W
K/W
R
JL
R
JA
T
j,
T
STG
-65 to +150
C
Notes:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
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