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參數(shù)資料
| 型號： | 1N5355D |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | DIODE SCHOTTKY 40V 350MA SOD-523 |
| 中文描述： | 18 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | PLASTIC, T-18, 2 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 71K |
| 代理商： | 1N5355D |
1N5333B Series
http://onsemi.com
7
100
10
1
0.1
80
100
120
140
160
180
200
220
V
Z
, ZENER VOLTAGE (VOLTS)
I
Figure 9. Zener Voltage versus Zener Current
V
Z
= 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
LA
P
D
+ T
A
LA
is the lead-to-ambient thermal resistance and P
D
is the
power dissipation.
Junction Temperature, T
J
, may be found from:
T
J
= T
L
+ T
JL
T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
T
JL
=
JL
P
D
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
( T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
V =
VZ
T
J
VZ
, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power-pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5355D/TR8 | 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE T-18 - Tape and Reel |
| 1N5355DTR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Silicon 5 Watt Zener Diodes |
| 1N5355E3/TR12 | 功能描述:DIODE ZENER 18V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:18V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 歐姆 不同?Vr 時的電流 - 反向漏電流:500nA @ 13V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應商器件封裝:T-18 標準包裝:3,000 |
| 1N5355E3/TR13 | 功能描述:DIODE ZENER 18V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:18V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 歐姆 不同?Vr 時的電流 - 反向漏電流:500nA @ 13V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應商器件封裝:T-18 標準包裝:1,250 |
| 1N5355E3/TR8 | 功能描述:DIODE ZENER 18V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標稱值）（Vz）:18V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 歐姆 不同?Vr 時的電流 - 反向漏電流:500nA @ 13V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應商器件封裝:T-18 標準包裝:1,000 |
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