參數(shù)資料
型號： 1N5230BT/R
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 4.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 2/7頁
文件大?。?/td> 34K
代理商： 1N5230BT/R
1996 Apr 26
2
Philips Semiconductors
Product specication
Voltage regulator diodes
1N5225B to 1N5267B
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series: ±5%
Working voltage range:
nom. 3.0 to 75 V
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM239
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature
≤ 75 °C.
ELECTRICAL CHARACTERISTICS
Table 1
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 s; square wave;
Tj =25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb =50 °C; lead length max.;
note 1
400
mW
Lead length 8 mm; note 2
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 s; square wave;
Tj =25 °C prior to surge; see Fig.3
40
W
tp = 8.3 ms; square wave;
Tj ≤ 55 °C prior to surge
10
W
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
65
+200
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 200 mA; see Fig.4
1.1
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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