參數(shù)資料
型號: 1N5228C-TAP
廠商: VISHAY SEMICONDUCTORS
元件分類: 齊納二極管
英文描述: 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封裝: GLASS PACKAGE-2
文件頁數(shù): 3/7頁
文件大?。?/td> 114K
代理商: 1N5228C-TAP
1N5221C to 1N5267C
Document Number 84613
Rev. 1.0, 02-Sep-04
Vishay Semiconductors
www.vishay.com
3
1) Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Typical Characteristics (Tamb = 25
° C unless otherwise specified)
1N5265C
62
2
185
1400
+0.097
0.1
47
1N5266C
68
1.8
230
1600
+0.097
0.1
52
1N5267C
75
1.7
270
1700
+0.098
0.1
56
Partnumber
Nominal Zener
Voltage1)
Test Current
Maximum
Dynamic
Impedance1)
Maximum
Dynamic
Impedance
Typical
Temperature of
Coeffizient
Maximum Reverse Leakage
Current
@ IZT, VZ
IZT
ZZT @ IZT
ZZK @ IZK =
0.25 mA
@ IZT
IR
VR
V
mA
α (%/K)
A
V
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
95 9611
0
5
10
15
0
100
200
300
400
500
20
R
Therm.Resist.
Junction
/
Ambient
(
K/W
)
thJA
l – Lead Length ( mm )
ll
TL=constant
0
5
10
15
20
1
10
100
1000
V
V
oltage
Change
(
m
V
)
Z
VZ – Z-Voltage(V)
25
95 9598
IZ=5mA
Tj=25°C
Figure 3. Typical Change of Working Voltage vs. Junction
Temperature
Figure 4. Total Power Dissipation vs. Ambient Temperature
–60
0
60
120
180
0.8
0.9
1.0
1.1
1.2
1.3
V
Relative
V
oltage
Change
Ztn
Tj – Junction Temperature (°C )
240
95 9599
VZtn=VZt/VZ(25°C)
TKVZ=10 x 10–4/K
8x 10–4/K
–4 x 10–4/K
6x 10–4/K
4x 10–4/K
2x 10–4/K
–2 x 10–4/K
0
40
80
120
160
0
100
300
400
500
600
P
T
otal
Power
Dissipation
(
m
W
)
tot
Tamb– Ambient Temperature(°C )
200
95 9602
200
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