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參數(shù)資料
| 型號(hào)： | 1N4754ACTA2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 39 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 1N4754ACTA2 |
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-5
500 mW DO-35 Glass Data Sheet
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLAisthelead-to-ambientthermalresistance(°C/W)andPDis
the power dissipation. The value for
θLA will vary and depends
on the device mounting method.
θLA is generally 30 to 40°C/W
for the various clips and tie points in common use and for
printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the tie
point. The thermal mass connected to the tie point is normally
large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulsed operation
once steady-state conditions are achieved. Using the mea-
sured value of TL, the junction temperature may be deter-
mined by:
TJ = TL + TJL.
TJL is the increase in junction temperature above the lead
temperature and may be found as follows:
TJL = θJLPD.
θJL may be determined from Figure 3 for dc power condi-
tions. For worst-case design, using expected limits of IZ, limits
of PD and the extremes of TJ(TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V = θVZ TJ.
θVZ, the zener voltage temperature coefficient, is found from
Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Surge limitations are given in Figure 5. They are lower than
would be expected by considering only junction temperature,
as current crowding effects cause temperatures to be ex-
tremely high in small spots, resulting in device degradation
should the limits of Figure 5 be exceeded.
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| 1N4754AE3 | 制造商:Microsemi Corporation 功能描述:SILICON 1 WATT ZENER DIODES |
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