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參數(shù)資料
| 型號： | 1N4461US |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 6.8 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | HERMETIC SEALED, GLASS, D-5A, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 1N4461US |
DESIGN DATA
CASE: D-5A, hermetically sealed glass
case, per MIL-PRF- 19500/406
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
20 C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 4.5
C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN MAX
D
2.31
2.62
0.091 0.103
F
0.48
0.71
0.019 0.028
G
4.28
5.08
0.168 0.200
S
0.08MIN.
0.003MIN.
FIGURE 1
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/406
1.5 WATT ZENER DIODES
NON CAVITY CONSTRUCTION
METALLURGICALLY BONDED
1N6485US
THRU
1N6491US
AND
1N4460US
AND
1N4461US
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +200°C
Power Dissapation: 1.5W @ TA=+25°C
Power Derating: 10mW/°C above TA=+25°C
Forward Voltage: 1.0V dc @ IF=200mA dc
1.5 V dc @ IF=1A dc
ZENER
TEST
DYNAMIC
KNEE
TEST
REVERSE
TEST
MAXIMUM VZ (REG) MAXIMUM
VOLTAGE CURRENT IMPEDENCE IMPEDENCE CURRENT CURRENT VOLTAGE CURRENT
v VZ
SURGE
TYPE
(NOM.)
IZT
(MAX.)
IZK
(MAX.)
VR
IZM
±5%
ZZT@IZT
ZZK@IZT
IR@VR
VOLTS
mA
OHMS
mA
A
VOLTS
MA
VOLTS
AMPS
1N6485US
3.3
76.0
10
400
1.0
50
1.0
433
.90
4.2
1N6486US
3.66
9.0
10
400
1.0
50
1.0
397
.80
3.9
1N6487US
3.9
64.0
9
400
1.0
35
1.0
366
.75
3.6
1N6488US
4.3
58.0
9
400
1.0
5.0
1.0
332
.70
3.3
1N6489US
4.7
53.0
8
500
1.0
4.0
1.0
304
.60
3.0
1N6490US
5.1
49.0
7
500
1.0
280
.50
2.7
1N6491US
5.645.0
5
6
00
1.0
0.5
2.0
255
.40
2.5
1N4460US
6.2
40.0
4
200
1.0
10.0
3.72
230
.35
2.3
1N4461US
6.8
37.0
2.5
200
1.0
5.0
4.08
210
.30
2.1
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| 1N6487US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4461USJANTX | 制造商:Microsemi Corporation 功能描述: |
| 1N4462 | 制造商:Microsemi Corporation 功能描述:Diode Zener Single 7.5V 5% 1.5W 2-Pin Case A 制造商:Semtech Corporation 功能描述:Diode Zener Single 7.5V 5% 1.5W 2-Pin Case G-99 制造商:Microsemi Corporation 功能描述:ZENER SGL 7.5V 5% 1.5W 2PIN A - Bulk |
| 1N4462 BK | 功能描述:DIODE ZENER 7.5V 1.5W DO41 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:7.5V 容差:±5% 功率 - 最大值:1.5W 阻抗（最大值）（Zzt）:2.5 Ohms 不同?Vr 時的電流 - 反向漏電流:1μA @ 4.5V 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應商器件封裝:DO-41 標準包裝:2,000 |
| 1N4462 TR | 功能描述:DIODE ZENER 7.5V 1.5W DO41 制造商:central semiconductor corp 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 電壓 - 齊納（標稱值）（Vz）:7.5V 容差:±5% 功率 - 最大值:1.5W 阻抗（最大值）（Zzt）:2.5 Ohms 不同?Vr 時的電流 - 反向漏電流:1μA @ 4.5V 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應商器件封裝:DO-41 標準包裝:5,000 |
| 1N4462JANTX | 制造商:Microsemi Corporation 功能描述: |
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