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參數(shù)資料
| 型號(hào)： | 1N4448WS-7-F |
| 廠商： | DIODES INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SURFACE MOUNT FAST SWITCHING DIODE |
| 中文描述： | 0.25 A, 75 V, SILICON, SIGNAL DIODE |
| 封裝： | GREEN, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 337K |
| 代理商： | 1N4448WS-7-F |
Lead-free
DS30096 Rev. 8 - 2
1 of 3
1N4448WS
www.diodes.com
Diodes Incorporated
1N4448WS
SURFACE MOUNT FAST SWITCHING DIODE
Features
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
·
Case: SOD-323
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Leads: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Polarity: Cathode Band
Marking: See Page 2
Type Code: T5
Weight: 0.004 grams (approximate)
·
·
·
·
·
·
·
·
Mechanical Data
A
B
C
D
E
G
H
J
Characteristic
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
Value
100
Unit
V
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
75
V
53
500
250
4.0
2.0
200
625
V
mA
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0
m
s
@ t = 1.0s
I
FSM
A
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
P
d
R
q
JA
T
j
, T
STG
mW
°
C/W
°
C
-65 to +150
Maximum Ratings
@ T
A
= 25
°
C unless otherwise specified
Notes: 1. Short duration test pulse used to minimize self-heating.
2. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at
http://www/diodes.com/datasheets/ap02001.pdf.
3. No purposefully added lead.
Characteristic
Symbol
V
(BR)R
Min
75
Max
Unit
V
Test Condition
I
R
= 2.5
m
A
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 75V
V
R
= 75V, T
j
= 150
°
C
V
R
= 25V, T
j
= 150
°
C
V
R
= 20V
V
R
= 0, f = 1.0MHz
I
F
= I
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
W
Reverse Breakdown Voltage (Note 1)
Forward Voltage
V
FM
0.62
0.72
0.855
1.0
1.25
V
Peak Reverse Current (Note 1)
I
RM
2.5
50
30
25
4.0
m
A
m
A
m
A
nA
pF
Total Capacitance
C
T
Reverse Recovery Time
t
rr
4.0
ns
Electrical Characteristics
@ T
A
= 25
°
C unless otherwise specified
·
·
·
·
·
·
SOD-323
Min
2.30
1.60
1.20
1.05 Typical
0.25
0.20
0.10
0.05 Typical
0
°
All Dimensions in mm
Dim
A
B
C
D
E
G
H
J
Max
2.70
1.80
1.40
0.35
0.40
0.15
a
8
°
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4448WS-E3-08 | 制造商:Vishay Siliconix 功能描述:1N4448WS-E3-08 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOD323 |
| 1N4448WS-E3-18 | 制造商:Vishay Siliconix 功能描述:1N4448WS-E3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOD323 |
| 1N4448WSF | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
| 1N4448WSF-7 | 功能描述:二極管 - 通用，功率，開關(guān) Switching Diode BVR 100V,SOD323F,3K RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時(shí)間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| 1N4448WSFQ-7 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:SURFACE MOUNT FAST SWITCHING DIODE |
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