參數(shù)資料
型號(hào): 1N4448HWT-7
廠商: DIODES INC
元件分類(lèi): 參考電壓二極管
英文描述: SURFACE MOUNT FAST SWITCHING DIODE
中文描述: 0.125 A, 80 V, SILICON, SIGNAL DIODE
封裝: GREEN, ULTRA SMALL, PLASTIC PACKAGE-2
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 76K
代理商: 1N4448HWT-7
DS30395 Rev. 5 - 2
2 of 3
1N4448HWT
www.diodes.com
0
50
0
25
50
75
100
125
P
D
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Derating Curve
°
100
200
150
150
10
100
1
0.1
0
1000
800
200
400
600
I
F
V , FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
Ta = -30 C
°
Ta = 50 C
°
Ta = 0 C
°
Ta = 85 C
°
Ta = 25 C
°
Electrical Characteristics
@ T
A
= 25 C unless otherwise specified
Characteristic
Symbol
V
(BR)R
Min
80
0.62
Max
Unit
V
Test Conditions
I
R
= 100 A
I
F
= 5.0mA
I
F
= 10mA
I
F
= 100mA
I
F
= 150mA
V
R
= 80V
V
R
= 75V, T
j
= 150 C
V
R
= 25V, T
j
= 150 C
V
R
= 20V
V
R
= 0.5V, f = 1.0MHz
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
Reverse Breakdown Voltage (Note 5)
Forward Voltage
V
F
0.72
0.855
1.0
1.25
100
50
30
25
3.0
V
Peak Reverse Current (Note 5)
I
R
nA
A
A
nA
pF
Total Capacitance
C
T
Reverse Recovery Time
t
rr
4.0
ns
Note: 5. Short duration pulse test used to minimize self-heating effect.
0.10
1.0
10.0
0.01
0.001
0
20
40
60
80
V , REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
Ta = 100 C
°
Ta = 0 C
°
Ta = 75 C
°
Ta = 50 C
°
Ta = 25 C
°
Ta = -30 C
°
0
4
6
8
2
10
I , FORWARD CURRENT (mA)
Fig. 4 Reverse Recovery Time vs.
Forward Current
t
r
0
0.5
1.0
1.5
2.0
2.5
相關(guān)PDF資料
PDF描述
1N4448W-7-F FAST SWITCHING SURFACE MOUNT DIODE
1N4448W-7 FAST SWITCHING SURFACE MOUNT DIODE
1N4448W VC-MEMV-K1
1N4448W VC-MEMV-K4
1N4448W VC-MP-A3
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