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參數(shù)資料
| 型號(hào)： | 1N4151 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon Epitaxial Planar Diode |
| 中文描述： | 硅外延平面二極管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 11K |
| 代理商： | 1N4151 |
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4151
RECTRON
1N4151 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
°
C)
Items
Reverse Voltage
Reverse Recovery
Time
Power Dissipation
3.33mW/
°
C (25
°
C)
Forward Current
Junction Temp.
Storage Temp.
Symbol
VR
trr
Ratings
50
2
Unit
V
ns
P
500
mW
IF
Tj
300
mA
°
C
°
C
-65 to 175
-65 to 175
Tstg
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
DO-35
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Dimensions (DO-35
)
DO-35
0.457
0.559
2.0
max.
4.2
max.
26 MIN
26 MIN
Dimensions in millimeters
DIA.
DIA.
Electrical Characteristics (Ta=25
°
C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 50mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150
°
C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Symbol
BV
Ratings
Unit
V
75
1.0
IFsurge
VF
A
V
1.0
IR
0.050
50
uA
Cj
2
pF
trr
2
ns
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