參數(shù)資料
型號(hào): 1N4150W/D4
廠商: GENERAL SEMICONDUCTOR INC
元件分類: 參考電壓二極管
英文描述: 0.2 A, SILICON, SIGNAL DIODE
文件頁數(shù): 1/1頁
文件大?。?/td> 35K
代理商: 1N4150W/D4
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
VF
IF = 200mA
1.05
V
Reverse Current
IR
VR = 50V
100
nA
Reverse Recovery Time
trr
IF = IR = 10 to 200mA
4.0
ns
to Irr = 0.1IF
Note: (1) Valid provided that electrodes are kept at ambient temperature.
1/11/01
.022 (0.55)
.1
12
(2.
85)
.1
52
(3.
85)
.067 (1.70)
.0
53
(1.
3
5)
ma
x
.
.010 (0.25)
min.
Cathode Band
.006
(0.
15)
ma
x
.
Top View
.140
(3.
55)
.1
00
(2.
55)
.055 (1.40)
.004
(0.1)
max.
SOD-123
1N4150W
Small-Signal Diode
Features
Silicon Epitaxial Planar Diode
For general purpose and switching
This diode is also available in other case styles
including the DO-35 case with the type
designation 1N4150, and the MiniMELF case with
the type designation LL4150.
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Peak Reverse Voltage
VRM
50
V
Maximum Average Rectified Current
IF(AV)
200
mA
Maximum Power Dissipation at Tamb = 25°CPtot
410(1)
mW
Maximum Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Mechanical Data
Case: SOD-123 Plastic Case
Weight: approx. 0.01g
Marking Code: A4
Packaging Codes/Options:
D3/10K per 13” reel (8mm tape), 30K/box
D4/3K per 7” reel (8mm tape), 30K/box
0.094 (2.40)
0.055 (1.40)
0.055
(1.
40)
Mounting Pad Layout
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