參數(shù)資料
型號(hào): 1N4004
廠商: 美麗微半導(dǎo)體有限公司
英文描述: 1.0 AMP SILICON RECTIFIERS
中文描述: 1.0安培硅整流
文件頁(yè)數(shù): 2/5頁(yè)
文件大小: 40K
代理商: 1N4004
1996 May 24
2
Philips Semiconductors
Product specication
Rectiers
1N4001G to 1N4007G
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
1N4001G
50
V
1N4002G
100
V
1N4003G
200
V
1N4004G
400
V
1N4005G
600
V
1N4006G
800
V
1N4007G
1000
V
VR
continuous reverse voltage
1N4001G
50
V
1N4002G
100
V
1N4003G
200
V
1N4004G
400
V
1N4005G
600
V
1N4006G
800
V
1N4007G
1000
V
IF(AV)
average forward current
averaged over any 20 ms
period; Tamb =75 °C; see Fig.2
1.00 A
averaged over any 20 ms
period; Tamb = 100 °C; see Fig.2
0.75 A
IF
continuous forward current
Tamb =75 °C; see Fig.2
1.00 A
IFRM
repetitive peak forward current
10
A
IFSM
non-repetitive peak forward current
half sinewave; 60 Hz
30
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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