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參數(shù)資料
| 型號(hào)： | 1N3999C |
| 廠商： | MICROSEMI CORP |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 6.8 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA |
| 封裝： | HERMETIC SEALED, METAL GLASS, DO-4, 1 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 215K |
| 代理商： | 1N3999C |
10 WATT ZENER DIODES
SCOTTSDALE DIVISION
1N2970 thru 1N3015B
and 1N3993 thru 1N4000A
W
M
.
C
1
1
NOTES:
1. 1N3993 - 1N4000 series: suffix A indicates +/-5% tolerance, no suffix indicates +/-10% tolerance. 1N2970 – 1N3015 series: suffix B
indicates +/- 5% tolerance, suffix A indicates +/-10%, no suffix indicates +/-20% tolerance. If tighter tolerance is required, consult
factory.
2.
The electrical characteristics are measured after allowing the device to stabilize for 90 seconds with 30
o
C Base temperature.
3.
The zener impedance (Z
ZT
) is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10% of
the dc zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. When making zener impedance measurements at the I
ZK
test point, it may
be necessary to insert a 60 Hz band pass filter between the diode and voltmeter to avoid errors resulting from low level noise signals. A
curve showing the variation of zener impedance vs. zener current for three representative types is shown in Figures 2 and 3. Also see
Microsemi MicroNote 202.
4.
These values of I
ZM
may be exceeded in the case of individual diodes. The values shown are calculated for the worst case that is a unit
of +/-5% tolerance at the high voltage end of its tolerance range. Allowance has also been made for the rise in zener voltage above V
ZT
,
which results from zener impedance and the increase in junction temperature as power dissipation approaches 10 watts.
GRAPHS
FIGURE 1
Power Derating Curve
P
Stud Temperature (
o
C)
FIGURE 2
FIGURE 3
Typical Zener Impedance vs. Zener Current
For Types Shown
Typical Zener Impedance vs. Zener Current
For Types Shown
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2003
11-12-2003 REV A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N3999D | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N3999R | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N3999RA | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N3999RB | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N3999RC | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N3999D | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:10 WATT ZENER DIODES |
| 1N3999R | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:10 WATT ZENER DIODES |
| 1N3999RA | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:10 WATT ZENER DIODES |
| 1N3999RB | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:10 WATT ZENER DIODES |
| 1N3999RC | 制造商:MICROSEMI 制造商全稱(chēng):Microsemi Corporation 功能描述:10 WATT ZENER DIODES |
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