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參數(shù)資料
| 型號： | 1N3614GP/4H |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | PLASTIC, DO-41, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 328K |
| 代理商： | 1N3614GP/4H |
www.vishay.com
2
Document Number 88502
14-Sep-05
1N3611GP thru 1N3614GP and 1N3957GP
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
*JEDEC registered values
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP
Unit
Maximum
instantaneous forward
voltage
at 1.0 A
VF
1.0
V
* Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 150 °C
IR
1.0
300
A
Typical reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
s
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
8.0
pF
Parameter
Symbol 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3957GP
Unit
Typical thermal resistance (1)
RθJA
RθJL
55
25
°C/W
Figure 1. Max. Forward Current Derating
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
175
0.375" (9.5mm)
Lead Length
60 Hz
Resistive or
Inductive Load
Ambient Temperature, °C
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
5.0
10
15
20
25
30
1
10
100
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
TJ = TJ max.
8.3 ms Single Half Sine-Wave
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