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參數(shù)資料
| 型號： | 1N2970A |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 6.8 V, 10 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AA |
| 封裝： | HERMETIC SEALED, GLASS, DO-4, 1 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 136K |
| 代理商： | 1N2970A |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
10 WATT ZENER DIODES
Qualified per MIL-PRF-19500/124
T4-LDS-0075 Rev. 1 (082463)
Page 1 of 6
DEVICES
LEVELS
1N2970 thru 1N3015B
JAN
and
JANTX
1N3993 thru 1N4000A
JANTXV
DESCRIPTION
These high power 10 W Zener diodes represented by the JEDEC registered
1N2970 thru 1N3015B and 1N3993 thru 1N4000A series provide voltage
regulation in a selection over a 3.9 V to 200 V broad range of voltages. They may
be operated up to 10 W with adequate mounting and heat sinking with their low
thermal resistance. These Zeners are also available in JAN, JANTX, JANTXV
military qualifications. Microsemi also offers numerous other Zener products to
meet higher and lower power applications.
FEATURES
JEDEC registered 1N2970 thru 1N3015B and 1N3993 thru 1N4000A
Internal solder bond construction
Hermetically sealed (welded)
Zener Voltage 3.9V to 200V.
Also available in JAN, JANTX, and JANTXV qualifications per MIL-
PRF-19500/124 by adding the JAN, JANTX, or JANTXV prefixes to part
numbers for desired level of screening; (e.g. JANTX1N2970B,
JANTXV1N3996A, etc.
Standard polarity is anode to case (stud) for 1N2970 thru 1N3015B and
cathode to case for 1N3993 thru 1N4000A
Reverse polarity is cathode to case for 1N2970 thru 1N3015B and anode to
case for 1N3993 thru 1N4000A by designating R suffix, e.g. 1N2970RB,
1N3993RA, etc.
Consult factory for surface mount equivalents
DO-4 (DO-203AA)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N3004RA | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N3009RA | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N4618UR | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| 1N4118UR | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| 1N4619UR | GLASS SURFACE MOUNT 0.5 WATT ZENERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N2970AR | 制造商:NAINA 制造商全稱:Naina Semiconductor ltd. 功能描述:10 WATT ZENER DIODES |
| 1N2970B | 功能描述:ZENER DIODE 6.8V D0-4 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標準包裝:1 系列:- 電壓 - 齊納（標稱）(Vz):36V 電壓 - 在 If 時為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| 1N2970B | 制造商:Solid State Devices Inc (SSDI) 功能描述:ZENER DIODE 10W 6.8V DO-4 |
| 1N2970BJ | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
| 1N2970BJAN | 制造商:MILITARY SPECIFICATIONS P 功能描述: |
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