參數(shù)資料
型號: 1MBI200S-120
英文描述: IGBTs
中文描述: IGBT的
文件頁數(shù): 1/1頁
文件大?。?/td> 35K
代理商: 1MBI200S-120
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相關(guān)PDF資料
PDF描述
1MBI200SA120 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)
1MBI200SA-120 SINGLE IGBT
1MBI25FE120 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 25A I(C)
1MBI300-120 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)
2MBI50-120 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 50A I(C)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1MBI200S-120 制造商:Fuji Electric 功能描述:IGBT MODULE 1200V 200A
1MBI200SA120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)
1MBI200SA-120 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SINGLE IGBT
1MBI200U4H-120L-50 制造商:Fuji Electric 功能描述:IGBT CHOP U SER 200A 1200V M249 制造商:Fuji Electric 功能描述:IGBT, CHOP, U SER, 200A, 1200V, M249
1MBI2400U4D-120 制造商:Fuji Electric 功能描述:IGBT, MODULE, SINGLE, 2400A/1200V 制造商:Fuji Electric 功能描述:IGBT, MODULE, SINGLE, 2400A/1200V; Transistor Polarity:N Channel; DC Collector Current:3.6kA; Collector Emitter Voltage Vces:2.11V; Power Dissipation Pd:14.7kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; ;RoHS Compliant: No